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蓝宝石上硅膜（SOS）肖特基结注入电流检测的电子自旋共振及Si/Al₂O₃界面缺陷

ESR of Silicon Film on Sapphire Detected by Injected Current and the Defects on the Si/Al₂O₃ Interface

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【Author】 Fu Jishi/Dept.of Physics,Peking University, Beijing,100871Wu En/Dept.of Physics,Peking University, Beijing,100871Qin Guogang/Dept.of Physics,Peking University, Beijing,100871Zhu Meidong/Dept. of Radioelectronics, Peking University, Beijing 100871Yu Yuanhuan/Institute of Semiconductors, Academic Sinica , Beijing 100083

【机构】北京大学物理系；北京大学无线电系；中国科学院半导体研究所北京 100871；北京 100871；北京 100083；

【摘要】我们用高灵敏的肖特基结注入电流检测磁共振方法对蓝宝石上外延硅膜进行了研究。实验观察到一各向同性非对称的磁共振谱,经拟合它由线宽10^-3T,g值分别为2.0055及2.012的二线组合而成,二线强度比3.7:1。前者是硅悬挂键,后者为非晶硅价态尾态共振。实验证实该磁共振信号来自于Si/Al₂O₃界面。更多还原

【Abstract】 The investigation of silicon film on sapphire was performed using the magnetic resonancedetected by injected current through the Schottky junction. An isotropic and asymmetric spectrumwas observed. By simulation the spectrum consists of two lines with the line widthabout 10^-3T. The g value is 2. 0055 and 2. 012 respectively, and the intensity ratio is 3. 7:1.The experiments show that the spectra come from defects on Si/Al₂O₃ interface. Maybe theline of g=2. 0055 comes from Si dangling bond and another one comes from the valence-bandtailstate of amorphous silicon.更多还原