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GaAs/Ga0.7Al0.3As超晶格中场致激子峰展宽机制的研究

Study of Electric Field-Induced Exciton Linewidth Broadening in Short-Period GaAs/GaAlAs Superlattices

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【作者】 张耀辉; 江德生; 李锋; 吴荣汉; 周均铭; 梅笑冰;

【Author】 Zhang Yaohui/National Laboratory for Superlattices and Microstructures,Institue of Semiconductors,Chinese Academy of Sciences, Beijing 100083Jiang Desheng/National Laboratory for Superlattices and Microstructures,Institue of Semiconductors,Chinese Academy of Sciences, Beijing 100083L Feng/National Laboratory for Superlattices and Microstructures,Institue of Semiconductors,Chinese Academy of Sciences, Beijing 100083Wu Ronghan/National Laboratory for Superlattices and Microstructures,Institue of Semiconductors,Chinese Academy of Sciences, Beijing 100083Zhou Junming/Institute of Physics,Chinese Academy of Sciences,Beijing 100080Mei Xiaobing/Institute of Physics,Chinese Academy of Sciences,Beijing 100080

【机构】 半导体超晶格国家重点实验室中国科学院半导体研究所; 中国科学院物理研究所分子束外延实验室; 中国科学院物理研究所分子束外延实验室 北京 100083; 北京 100083; 北京 100080; 北京 100080;

【摘要】 我们利用光电流谱在10—300K温度范围内研究了GaAs/Ga0.7Al0.3As(35A/35A)短周期超晶格中的Wannier-Stark效应,实验发现0h激子峰随电场的增加而展宽。我们把激子峰的场致展宽归因于:Wannier-Stark局域化使界面的涨落对电子态的散射增加而使激子峰展宽。这种与电场有关的散射机制会使L.Esaki和Tsu所预期的超晶格的负微分电阻效应减小。

【Abstract】 We have investigated Wanniier-Stark effect in GaAs/GaAlAs superlattices under electricfields by photocurrent spectroscopy measurements at the range of 10-300K temperatures.The Oh stark ladder exciton linewidth was found to increase significantly with electric field atlow temperatures. This increased broadening is attributed to a stronger scattering to electronicstates by interface roughness due to Wannier-Stark localization. The scattering mechanismrelated to electric field will weaken the negative differetial conductance effects in the directionof superlattices predicted by L. Esaki and R. Tsu.

【关键词】 GaAs/Ga; 激子; Al; 超晶格; 量子阱; Stark; 电子态; 电子能态; 空穴态; 弛豫时间;
【基金】 国家自然科学基金
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1993年10期
  • 【下载频次】31
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