节点文献
GaAs/Ga0.7Al0.3As超晶格中场致激子峰展宽机制的研究
Study of Electric Field-Induced Exciton Linewidth Broadening in Short-Period GaAs/GaAlAs Superlattices
【摘要】 我们利用光电流谱在10—300K温度范围内研究了GaAs/Ga0.7Al0.3As(35A/35A)短周期超晶格中的Wannier-Stark效应,实验发现0h激子峰随电场的增加而展宽。我们把激子峰的场致展宽归因于:Wannier-Stark局域化使界面的涨落对电子态的散射增加而使激子峰展宽。这种与电场有关的散射机制会使L.Esaki和Tsu所预期的超晶格的负微分电阻效应减小。
【Abstract】 We have investigated Wanniier-Stark effect in GaAs/GaAlAs superlattices under electricfields by photocurrent spectroscopy measurements at the range of 10-300K temperatures.The Oh stark ladder exciton linewidth was found to increase significantly with electric field atlow temperatures. This increased broadening is attributed to a stronger scattering to electronicstates by interface roughness due to Wannier-Stark localization. The scattering mechanismrelated to electric field will weaken the negative differetial conductance effects in the directionof superlattices predicted by L. Esaki and R. Tsu.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1993年10期
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