【摘要】 我们采用两参数的Keating模型描述晶体的短程相互作用,并引入有效电荷Z描述长程的库仑相互作用,研究了极性半导体的晶格动力学性质。对SiC,GaAs,GaSb和InSb的计算表明,本文的结果与实验及其它理论计算符合较好。由于本文的模型只引入了三个参数,具有参数少,物理图象清晰的性质,因此,这个模型可以应用到复杂的体系,如超晶格等。更多还原

【Abstract】 The lattice dynamical properties of polar semiconductors have been studied by using twoparameterKeating model with long-range Coulomb interactions.Results obtained for SiC,GaAs, GaSb and InSb agree quite well with experiments and other theoretical calculations.The present model involves only three parameters with clear physical significance. Thereforeit can be easily applied to some complicated systems, such as semiconductor superlattices.更多还原