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自然氧化和电子辐照对多孔硅结构有序度的影响

Influence of Spontaneous Oxidation and Electron Beam Irradiation on Structure Ordering of Porous Silicon

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【Author】 Guan Hao/Department of Physics & Laboratory of Solid State Microstructure Nanjing University, Nanjing 210008Yan Feng/Department of Physics & Laboratory of Solid State Microstructure Nanjing University, Nanjing 210008Bao Ximao/Department of Physics & Laboratory of Solid State Microstructure Nanjing University, Nanjing 210008Yang Haiqiang/Department of Physics & Laboratory of Solid State Microstructure Nanjing University, Nanjing 210008Wu Xiaowei/Department of Physics & Laboratory of Solid State Microstructure Nanjing University, Nanjing 210008Hong Jianming/Department of Physics & Laboratory of Solid State Microstructure Nanjing University, Nanjing 210008

【机构】南京大学物理系和固体微结构实验室；南京大学物理系和固体微结构实验室南京 210008；南京 210008；南京 210008；

【摘要】多孔硅在空气中自然氧化形成Si—O—Si键,引起晶格畸变,导致有序度下降,氧化层用HF去除,有序度可恢复。大束流电子束辐照直接引起晶粒无序化,其有序度不能在HF浸泡中恢复。更多还原

【Abstract】 In air, the porous silicon is spontaneously oxidized and Si-O-Si bonds are formed,which introduced the distortion of the lattice and caused the disordering in the crystallites.When the native oxide is removed by I-IF etching, the ordering can be restored. But under irradiationof the electron beam, the crystallites disorder gradually and the ordering can not berestored by the brief etch in HF.更多还原

【关键词】自然氧化；有序度；多孔硅；电子辐照；晶格畸变；电子束辐照；氧化层；透射电子显微镜；蓝移现象；无序化；

【基金】国家自然科学基金

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1993年08期

【被引频次】1
【下载频次】25

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