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InGaAs/GaAs应变层短周期超晶格的Wannier-Stark效应

Wannier-Stark Effects in InGaAs/GaAs Short-Period Strained Superlattices

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【Author】 Liu Wei/National Laboratory for Superlattices and Microstructures, Institvte of Semiconductors, Academia Sinica, Beijing 100083;Department of Physics, Beijing Normal University, Beijing 1000875Zhang Yaohui/National Laboratory for Superlattices and Microstructures, Institvte of Semiconductors, Academia Sinica, Beijing 100083Jiang Desheng/National Laboratory for Superlattices and Microstructures, Institvte of Semiconductors, Academia Sinica, Beijing 100083Wang Ruozhen/Department of Physics, Beijing Normal University, Beijing 1000875Zhou Junming/Institute of Physics, Academia Sinca, Beijing 100080Mei Xiaobing/Institute of Physics, Academia Sinca, Beijing 100080

【机构】中国科学院半导体研究所半导体超晶格国家重点实验室；北京师范大学物理系；中国科学院物理研究所；中国科学院物理研究所北京 100083 北京师范大学物理系；北京 1000875；北京 100083；北京 100080；北京 100080；

【摘要】本文利用光电流谱方法研究了10—300K温度范围内In_0.2Ga_0.8As/GaAs应变层短周期超晶格的Wannier-Stark效应,在室温及低温下均观察到明显的吸收边场致“蓝移”现象,并对Stark-ladder激子跃迁的能量位置及振子强度随电场的变化给予详细讨论。实验结果表明,利用In_0.2Ga_0.8As/GaAs应变层超晶格的Wannier-Stark效应可以制作0.98μm波长范围的电光调制器和自电光双稳器件。更多还原

【Abstract】 Photocurrent spectra in the temperature range of 10-300K have been made to investigateWannier-Stark localization effects in In_0.2Ga_0.8As/GaAs short-period strained superlattices.At room and low temperature we have both observed the field-induced "blue shift" of the absorptionedge, and discussed the variations of the energies and strengths of the Stark-ladderexeitonic transitions with electric field. The experimental results show that electro-opticalmodulation devices performed at wavelength of about 9800A can be made by using Wannier-Stark localizition effect in In_0.2Ga_0.8As/GaAs superlat ices.更多还原

【关键词】 Wannier-Stark；应变层； InGaAs/GaAs；超晶格；激子；量子阱；振子强度；吸收边；跃迁能；空穴态；

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1993年08期

【被引频次】2
【下载频次】48

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