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分子束外延生长p型ZnSe-ZnTe超晶格

p-Type ZnSe-ZnTe Strained-Layer Superlattices Grown by Molecular Beam Epitaxy

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【Author】 Xu Liang/Shanghai Institute of Optics and Fine Mechanics,Academia Sinica, Shanghai 201800Wang Hailong/Shanghai Institute of Optics and Fine Mechanics,Academia Sinica, Shanghai 201800Shen Aidong/Shanghai Institute of Optics and Fine Mechanics,Academia Sinica, Shanghai 201800Cui Jie/Shanghai Institute of Optics and Fine Mechanics,Academia Sinica, Shanghai 201800Chen Yunliang/Shanghai Institute of Optics and Fine Mechanics,Academia Sinica, Shanghai 201800Shen Yuhua/Shanghai Institute of Optics and Fine Mechanics,Academia Sinica, Shanghai 201800

【机构】中国科学院上海光机所；中国科学院上海光机所上海 201800；上海 201800；上海 201800；

【摘要】一种p型应变层超晶格已用调制掺杂技术实现,这种超晶格材料是由不掺杂的ZnSe层和掺Sb的ZnTe层交替生长组成的,电学性质已由霍尔效应测量获得。p型应变层超晶格的空穴迁移率为220—250cm²/V·s,空穴浓度为3—5×10¹⁴/cm³。更多还原

【Abstract】 A p-type conductive strained-layer superlattice （SLS） consisted of undoped ZnSe layersand antimony（Sb） doped ZnTe layers has been realized by using the modulation doping technique.The electrical properties of the modulation-doped samples were evaluated by Hall-effectmeasurements.For this p-type SLS, the hole mobility varied from 220 to 250cm²/V·s,and the hole concentration from 3×10¹⁴to 5×10¹⁴/cm³, respectively.更多还原

【关键词】 ZnSe-ZnTe；分子束外延生长；调制掺杂；超晶格结构；空穴浓度；空穴迁移率；应变层；半宽；霍尔效应；电学性质；

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1993年08期

【被引频次】2
【下载频次】19

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