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p—Hg0.97Mn0.03Te的磁阻振荡及霍耳系数振荡

Magnetoresistance Oscillation and Hall Coefficient Oscillation of p-Hg0.97Mn0.03Te

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【作者】 沈金熙; 郑国珍; 郭少令; 汤定元;

【Author】 Shen Jinxi/National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083Zheng Guozhen/National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083Guo Shaoling/National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083Tang Dingyuan/National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083

【机构】 中国科学院上海技术物理研究所红外物理国家实验室; 中国科学院上海技术物理研究所红外物理国家实验室 上海 200083; 上海 200083; 上海 200083;

【摘要】 p型零禁带Hg0.97Mn0.03Te在深低温(T<4.2K)弱磁场(B<0.6T)区出现磁阻振荡及霍耳系数振荡。用补充了交换互作用项的P-B模型拟合计算了各峰值位置,表明此组份Hg1-x-MnxTe的重空穴价带bv(-1)已交叠到导带ac(1)之上。霍耳系数出现清晰的振荡行为,拟合计算表明这是由于费米能级为受主能级所钉扎引起的载流子浓度的振荡。

【Abstract】 Magnetoresistance oscillation and Hall coefficient oscillation of p-type zero-gap Hg0.97Mn0.03Te have been measured at low temperature (T<4.2K) and weak magnetic field(B<0. 6T). The SdH peak position was fitted by the Modified Pidgeon-Brown model and wefound that for this composition, the valance band/bv (-1) overlapped the conduction band ac(1). Theoretical calculation shows that the Hall coefficient oscillation is caused by the electronconcentration oscillation resulted from the acceptor pinned Fermi level.

【关键词】 磁阻; Hg; Mn; Te; 费米能级; 弱磁场; 受主能级; 峰值位置; 载流子浓度; 禁带;
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1993年08期
  • 【下载频次】11
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