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非对称耦合双阱中载流子共振隧穿和LO声子辅助隧穿的光学证据

Optical Evidence of Carrier Resonant and LO-Phonon-Assisted Tunneling in an Asymmetric Coupled Quantum Wells

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【Author】 Xu Shijie/National Laboratory for Superlattices and Microstructures,Institute of Semiconductors, Academia Sinica, Beijing 100083;Department of Electronic Engineering. Xi’an Jiaotong University,Xi’an 710049Jiang Desheng/National Laboratory for Superlattices and Microstructures,Institute of Semiconductors, Academia Sinica, Beijing 100083Li Guohua/National Laboratory for Superlattices and Microstructures,Institute of Semiconductors, Academia Sinica, Beijing 100083Zhang Yaohui/National Laboratory for Superlattices and Microstructures,Institute of Semiconductors, Academia Sinica, Beijing 100083Luo Jinsheng/Department of Electronic Engineering. Xi’an Jiaotong University,Xi’an 710049

【机构】半导体超晶格国家重点实验室；西安交通大学电子工程系中国科学院半导体研究所；北京 100083 西安交通大学电子工程系；西安 710049；中国科学院半导体研究所；北京 100083；西安 710049；

【摘要】用稳态光致发光研究了偏压下的GaAs/Ga_0.65Al_0.35As/GaAs非对称耦合双阱（ADQW）结构中电子的隧穿现象。清楚地观察到电子从窄阱到宽阱的共振隧穿和LO声子辅助隧穿效应,而且证明来自于GaAlAs势垒层中的类AlAs模式声子在LO声子辅助隧穿过程中占据主导地位。更多还原

【Abstract】 Tunneling phenomena of electrons in a biased GaAs/Ga_0.35Al_0.65As/GaAs asymmetriccoupled quantum well（ADQW） structure have been investigated by using steady-state Photoluminescence.The effects of resonant tunneling and LO-phonon-assisted tunneling for electronsfrom the narrow well to the wide well have obviously been observed. It has also beendemonstrated that AlAs-like LO phonons from the GaAlAs tunnel barriers play a deminantrole in the LO-phonon-assisted process.更多还原

【关键词】 LO；声子；非对称；光致发光；势垒层；基态能级；荧光峰；量子阱结构；半导体异质结构；实验样品；

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1993年06期

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