【摘要】 本文介绍一种在n型Si衬底上制备浅p⁺-n结的方法。在Si衬底上通过固相反应形成一定厚度的TiSi₂薄膜后,穿过TiSi₂层进行离子注入掺杂,经快速热退火可形成浅P⁺-n结。TiSi₂薄膜既作为离子注入时的阻挡层,减小离子注入深度,又作为器件的电极及互联引线。这是一种自对准工艺。更多还原

【Abstract】 A method of formation of shallow p⁺-n junction on n-type Si substrate is presented.Through TiSi₂ layers formed by solid-state reaction on Si substrates, boron was implanted,followed by rapid thermal annealing. The TiSi₂ layers are used as B implantation screen to reducethe junction depth, as well as the device electrode and interconection material. This is akind of self-aligned technology.更多还原