【摘要】 用等离子体化学气相淀积法制备SnO₂/Fe₂O₃多层膜的界面处存在着一个厚度约为数百埃的O-Sn-Fe过渡层,而通常化学气相沉积法所制备的SnO₂/Fe₂O₃多层薄膜不存在与其相似的过渡层。不同SnO₂含量的烧结型SnO₂-Fe₂O₃复合材料的电导及气敏测量分析结果支持过渡层具有低电导、低灵敏特性的假设。AES,XPS及气敏特性的研究表明,退火过程不是形成过渡层的主要原因。过渡层的形成源与沉积过程中的等离子体的作用。更多还原

【Abstract】 A Thick interface transition layer exists near the interface between the SnO₂ and Fe₂O₃layer for SnO₂/Fe₂O₃ films perpared by plasma CVD. The sensitivity and conductance changeof the sintered SnO₂/Fe₂O₃ sensors with the amount of SnO₂ （mol%） is similar to the variationof K value and conductance with the deposition time of the SnO₂/Fe₂O₃ films. The resultssupport that the transition layer is assumed with lower conductance and sensitivity toflammable gas. The XPS and AES measurement rest lts obtained from the SnO₂/Fe₂O₃ filmsshow that the thermal annealing process does not influence obviously the formation and exitenceof the transition layer. We cannot find a transition layer similar to that in plasma CVDsamples to exist in CVD SnO₂/Fe₂O₃ samples, although the CVD deposition temperature washigher than that for plasma CVD. The main reason for formation of the transition layer can beattributed to the effects of the plasma in the plasma CVD deposition process at low pressure.更多还原