【摘要】 本文研究了非晶硅(a-Si:H)pin型太阳电池光照J-V特性的反常拐弯现象,发现这种拐弯可以区分为两种类型,它们分别与出现在p界面或n界面上的空穴势垒相联系。并且,以多步隧道复合模型为基础,进行了模拟计算,得到了与实验数据相符合的结果。更多还原

【Abstract】 This paper reports investigation on "S-like" bendings of the J-V characteristics of a-Si:H solar cells with configuration of glass/SnO₂/p a-SiCx:Hin/Ag. It is found that the bendingsof the J-V curves can be classified into two kinds, based on the fact that the bending occoursin the vicinity of V_<sub>ocor in the region of V>V_oc,and can be explained in terms of an extrahole barrier existing at the p-or n-interfaces,respectively, induced by contamination or interfacialmismatch.A simulating calculation has been carried out based on a model of multisteps tunneling recombination, and the results obtained are in good agreement with the experimentalcurves.更多还原