节点文献
新型GexSi1-x/Si异质结远红外探测器
A New Type of Far Infrared Detector Based on GexSi1-x/Si Heterojunction
【摘要】 用分子束外延技术结合硅平面工艺研制成了GexSi1-x/Si异质结远红外探测器。测试结果表明,界面势垒高度低于0.09eV,预计对应的工作波长可从2μm到12μm以上。50K时的探测率(黑体873k*)优于2×108cm·Hz1/2/W,30K为6×108cmHz1/2/W,对500K黑体,30K工作温度下D500k*为1.6×108cm·Hz1/2/W。由于探测器为宽带型,虽然峰值D*并不很高,但在30℃的环境辐射背景下,对人体温度的辐射也有较强烈的响应。
【Abstract】 A GexSi1-x/Si heterojunction infrared detecton was fabricated by molecular beam epitaxy(MBE) combined with Si planar technology. The bar(?)ier height is no more than 0.09eV and thephotoresponse range may be extended from 2μm to 12μm. The blackbody detectivity D873k* is2×108cmHz1/2/W at temperature of 50K and 6×(?)08 cmHz1/2/W at 30K, respectively. Also at30KD500K*is 1.6×108cmHz1/2W.Since its photoresponse range is broad, the detector is sensitiveto the radiation from humanbody under the bacl(?)ground of 300K though its peak detectivityis still low.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1993年04期
- 【被引频次】4
- 【下载频次】41