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GaAs/Ga_0.7Al_0.3As短周期超晶格中的自电光双稳和多稳态效应

Electro-Optical Bistability and Multistability Effects in GaAs/Ga_0.7Al_0.3As Short-Period Superlattices

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【Author】 Zhang Yaohui/National Laboratory for Semiconductor Superlcttices and microstructures, Institute of Semiconductors, Academia Sinica,Beijing 100083Jiang Desheng/National Laboratory for Semiconductor Superlcttices and microstructures, Institute of Semiconductors, Academia Sinica,Beijing 100083Li Feng/National Laboratory for Semiconductor Superlcttices and microstructures, Institute of Semiconductors, Academia Sinica,Beijing 100083Wu Ronghan/National Laboratory for Semiconductor Superlcttices and microstructures, Institute of Semiconductors, Academia Sinica,Beijing 100083Zhou Junming/Laboratory for Molecule Beam Epitaxy (MBE).Institute of Physics, Academia Sinica, Beijing 100080Mei Xiaobing/Laboratory for Molecule Beam Epitaxy (MBE).Institute of Physics, Academia Sinica, Beijing 100080

【机构】半导体超晶格国家重点实验室中国科学院半导体研究所；中国科学院物理研究所分子束外延实验室；中国科学院物理研究所分子束外延实验室北京 100083；北京 100083；北京 100080；北京 100080；

【摘要】我们研究了GaAs/Ga_0.7Al_0.3As（35A/35A）超晶格p-i-n二极管在超晶格光吸收边附近的室温光电流随电压的变化。Wannier局域化导致的-1h和-2h激子跃迁产生两个光电流负微分电阻区。在由超晶格p-i-n二极管组成的SEED器件中实现了光电流（吸收）的双稳和三稳态跳变,特别是在无外偏压下也观测到了明显的光电流双稳跳变。更多还原

【Abstract】 We have studied bias-dependence of photocurrent response near GaAs/Ga_0.7Al_0.3As superlatticeabsorption edge in superlattice p-i-n diodes at room temperature. The-1h and -2h excitontransitions induced by Wannier localization produce two regions of negative differential photoconductivity.Photocurrent （absorption） electro-optical bistability and tristability have beenrealized in SEED devices composed of a superlattice p-i-n diode, and especially, obvious bistabilitytransitions have been observed in unbiased SEED devices.更多还原