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全内反射型半导体光波导开关器件模型分析

Modeling Analysis of Total-Internal-Reflection Semiconductor Optical Switch

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【作者】 林雯华; 庄婉如; 王德煌;

【Author】 Lin Wenhua/Institute of Scmiconductors, Academia Sinica, National Integrated Optoelectronics Laboratory, Beijing 100083Zhuang Wanru/Institute of Scmiconductors, Academia Sinica, National Integrated Optoelectronics Laboratory, Beijing 100083Wang Dehuang/National Integrated Optoelectronics Laboratory, Beijing 100083;Department of Physics, Peking University, Beijing, 100871

【机构】 集成光电子学国家联合实验室半导体所实验区; 中国科学院半导体研究所; 北京大学物理系 北京 100083; 北京 100083; 北京 100871;

【摘要】 本文提出了一种简便可行的全内反射交叉型半导体光波导开关模型分析方法。该方法采用波动光学的原理,分析了全内反射型(TIR)开关中导波模式的传输和反射特性,采用反射率和透射率计算了开关的消光比、串话、损耗等性能与波导结构参数之间的关系,并考虑了波导吸收系数对开关性能的影响。对全内反射条件下Coos-Haenchen位移也做了讨论。

【Abstract】 A simply and practical modeling of the Total-Internal-Reflection (TIR) waveguide opticalswitch is carried out. The reflection phenomenon of the guided mode in optical switcheswith intersecting single-mode waveguide is inves(?)igated by the wave optics. Numerical resultsindicating variation of the reflectivity, extinction ratio and reflection loss with waveguideparameters are given. The crosstalk of TIR optical switch is presented. The various absorptioncoefficients as a function of the performance of TIR switch is calculated. Goos-Haenchen shiftunder the condition of TIR is also discussed.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1993年04期
  • 【被引频次】6
  • 【下载频次】39
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