【摘要】 研究了InP、InGaAs体材料薄膜和InGaAs/InP量子阱和超晶格的低压MOCVD生长。InP外延层背景电子浓度为（1-5）×10¹³/cm³,低温电子迁移率为45240cm²/V·s。InGaAs/InP异质结应变层匹配度可以控制在±（1-3）×10^-3,匹配的InGaAs层的背景电子浓度为（2-5）×10¹³/cm³,室温及低温电子迁移率为8660和65150cm²/v·s。InGaAs/InP量子阱的标定阱宽从114A减少到6.4A时低温光致发光峰能量上移量从59meV增加到362.5meV,线宽从12.4meV增加到57meV。InGaAs/InP超晶格的X射线衍射曲线显示了高至3级的卫星峰结构。观察到从AsH₃切换到PH₃时由于As的优先掺入特性引起的InP中As的掺入,其组份达到0.09。证实了它是线宽加大、荧光峰上移降低的一个因素。更多还原

【Abstract】 Low pressure MOCVD growth of InP, InGaAs bulk materials, InGaAs/InP quantum wellsand superlattices is investigated. The background electron concentrations of the InP layers were（1-5）×10¹⁵cm^-3, and the best 77K electron mobility was 45240cm²/V·s. The strained lattice mismatchof the InGaAs/InP heterojunction could be controled within（1-3）×10^-3. The backgroundelectron concentrations of the lattice matched In GaAs were （2-5）×10¹⁵cm^-3. Room temperatureand 77K electron mobilitise were 8660 and 65150 cm²/V·s, respectively, InGaAs/InP quantumwells with well width ranging from 114A to 6.4A have been grown. Corresponding energy shiftof the photoluminescence emission peak with respect to the reference layer due to quantum sizeeffect was varied from 59meV to 362.5meV, and the spectrum linewidth was increased from 12.4meV to 57meV. InGaAs/InP superlattices with the well width from 25A to 96A, barrier widthfrom 88A to 240A were grown. Double crystal X-ray diffraction rocking curves of the superlatticesshowed satellite peaks up to as high as thethird order demonstrating fairly high quality ofthe superlattices materials. Preferential incorporation of the residual As into InP grown onInGaAs layer was observed, and the incorporated As fraction was as high as 0.09, which wasa factor inceasing PL linewidth and decreasing PL energy shift.更多还原