【摘要】 本文采用光调制反射光谱(PR),双晶衍射(DCRD),光荧光激发光谱(PL)等技术研究了MBE-GaAs/Si异质结材料GaAs层的应变情况,以及从不同温度快速热退火后GaAs/Si(PR)谱的变化可看出GaAs外延层应变随退火温度增大而增大,GaAs能隙则随之下降,考虑到应力随温度变化因素后这些不同的测试方法所得的结论与(PR)谱结果基本一致。因此用室温光反射调制光谱对于检测室温下GaAs/Si材料的质量,剩余应力等是方便而有力的方法。更多还原

【Abstract】 The modulation Photoreflectance (PR), Photoluminesence (PL), and Double Crystal X-raydiffraction (DCRD) are used to study the strain of MBE-GaAs/Si materials. From the differentPR spectra of GaAs/Si material which are dealt with different temperature rapid thermal annealing,it is found that the GaAs layer’s strain increases, and the GaAs energy gap decreaseswith the annealing temperature increasing. Considered the change of the GaAs layers’ strainwith the temperature variety, the experimental results obtained by PR method are consistentwith those by PL and DCRD, so the PR method is a powerful and convenient means to measurethe crystal quality and stress of GaAs/Si materials.更多还原