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CoSi₂/n—Si肖特基势垒的形成和特性

Formation and Characterization of CoSi₂/n-Si Schottky Barriers

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【Author】 Zhang Lichun/Institute of Microelectronics, Peking University,Beijing,100871Gao Yuzhi/Institute of Microelectronics, Peking University,Beijing,100871Ning Baojun/Institute of Microelectronics, Peking University,Beijing,100871Hong Xiuhua/Institute of Microelectronics, Peking University,Beijing,100871Wang Yangyuan/Institute of Microelectronics, Peking University,Beijing,100871

【机构】北京大学微电子学研究所；北京大学微电子学研究所北京； 100871；北京； 100871；

【摘要】本文利用XRD、RBS、AES和四探针等方法研究了不同温度快速热退火后的Co/Si结构薄膜固相反应形成钴硅化物的相序、组份和电学特性。并报道了性能优越的CoSi₂/n-Si肖特基二极管的特性,其势垒高度为0.66eV,理想因子为1.01。更多还原

【Abstract】 Sequence of phase transition, composition and electrical properties of Cobalt silicides formedby Solid phase reaction growth techniques after rapid thermal annealing at different temperaturesare studies. In this paper, excellent characteristics of CoSi₂/n-Si Schottky diodes arereported.The corresponding schotttky barrier height of 0.66 eV and ideality factor of 1.01 areobtained.更多还原