【摘要】 在新的阻断状态解析模型基础上,定量讨论了双极模式静电感应晶体管(BSIT)主要结构参数(外延层杂质浓度N_B、漏源间距w、栅区深度r及栅间距2a)与沟道势垒的关系,同时给出了定性解释。还分析了大注入通态特性与结构参数的关系,为BSIT的关态及通态设计提供了理论依据。更多还原

【Abstract】 Based on a new analytical model, the relationship is quantitatively discussed between main structure parameters (the doping of epilayer N_b, the space between source and drain w, the depth of gate region r, and the gate spacing 2a)and channel potential barrier. The qualitative explanation is also given. And the relationship of analyses between main structure parameters and on-state characteristics in high injection level. The theoretical criteria are given for the design of BSIT offstate and on-state.更多还原