【摘要】 用 SEM,AES 和 XRD 研究了 Au/Zn/AuSb 多层金属结构与 p-GaP 在525℃合金化4min 后,它们所形成的金属一半导体层的基本特性。当 GaP 的 p 型层空穴浓度是5×1.0¹⁸cm^-3时,测量出它的比接触电阻是4×10^-4Ω·cm^-2。它比 AuZn 合金所形成的比接触电阻降低了一个数量级,从而形成了良好的金属-半导体欧姆接触。更多还原

【Abstract】 The basic properties p-GaP into Au/Zn/AuSb muhiple layer struc- ture at 525℃ for 4 minutes of metal-simiconductor contact layers formeduc by alloying are studied by SEM,AES and XRD.The specific contact resis- tance of 4×10^-4Ω·cm^-2 is measured only at the concentration of p=5×10¹⁸ cm^-3.As it is of the order of one lower than that of Au/Zn alloy,good con- tacts are obtained.更多还原