【摘要】 利用6.42 MeV 窄共振核反应¹H(¹⁹F,αγ)¹⁶O 研究了辉光放电制备的非晶硅多层膜中氢的深度分布、游动性及其随退火温度的关系。引进高斯分辨函数简化了数据处理过程。对氢污染及测氢标准也进行了讨论。更多还原

【Abstract】 The hydrogen contents, profiles and the changes of hydrogen mobilities with the annealing tempe ratures in amorphous silicon films, which are deposited on silicon wafers by glow discharge, are studiec by using resonance reaction ¹H (¹⁹F,αγ)¹⁶O with energy 6.42MeV. We introduce a Gaussian resolution function to simplify the data process , and the problems on hydrogen contamination and hydrogen standard samples are also discussed.更多还原