【摘要】 用深能级瞬态谱（DLTS）法,结合表面光伏（SPV）法,研究了1MeV能量和不同剂量的电子辐照下对N型液相外延（LPE）、汽相外延（VPE）GaAs层逐次引入的缺陷和400—500K温区等时退火行为.讨论了随辐照剂量逐次增大及等时退火后缺陷浓度N_T的变化,以及根据L²/D对N_T^-1作图来判别电照引入的“E”缺陷能级中对少子寿命起主要控制作用的复合中心能级.更多还原

【Abstract】 In this paper, using deep-level transient speotroacopy (DLTS) and surface photo voltage (SPV), the defects induced by different doses of electron irradiation with 1 MeV of energy in the N-type LPE and VPE-GaAs layers, and their isochronal annealing behavior at temperatures ranging from 400 K to 550 K have been systematically studied. The variations of defect concentration Nj- are discussed as the electron radiation dose increases and after isochronal annealing takes place. And it is shown that the main recombination centre level among all the defect levels induced by electron radiation can be identified according to the L2/D-N?1 graph.更多还原