【摘要】 本文针对Cz法晶体生长特点,通过采用数值模拟的方法,对Cz法生长砷化镓单晶时从引晶、放肩、等径至收尾这一完整工艺过程中晶体的温度场、熔体的温度场和速度场进行了计算,从中分析籽晶和坩埚的转向、转速等因素对流动和传热的影响,并与实际的生长砷化镓单晶过程进行比较.从比较结果看,二者基本吻合。更多还原

【Abstract】 In this paper, the temperature distribution of crystal, the temperature and velocity distributions of melt are calculated numerically for GaAs crystal growth with emphasis on the whole growth process from seeding, shoulder, fixed diameter to terminator growth, and the factors which influence the fluid flow and heat transfer such as rotating direction and rotating rate of crystal and crucible etc. are analyzed. Experimental results are given to compare with the calculating results, and it is found that two of them are agreement.更多还原