【摘要】 用热壁外延法在不同衬底温度条件下生长一系列ZnSe薄膜,并通过X射线衍射、喇曼散射以及光致发光技术对ZnSe薄膜质量作了研究。实验结果表明,随着衬底温度下降,ZnSe薄膜质量逐渐变差;当衬底温度低于300℃时,(100)ZnSe薄膜中有(111)孪晶出现;但同时发现衬底温度大于375℃时,衬底Ga原子对ZnSe外延层扩散严重。更多还原

【Abstract】 In this paper, we report the results of the growth of a series of ZnSe films on (100) GaAs at different substrate temperatures by hot wall epitaxy. The quality of ZnSe films has been studied by X-ray diffraction, Raman scattering and photoluminescence. The results show that: 1) We have got (100)-oriented single crystal fillms, but the quality becomes worse when lowering the substrate temperature. When the substrate temperature is below 300℃ there appears the (111)-oriented twins in the (100ZnSe. 2) When the substrate temperature is 350℃, Ga atom diffusion from the substrate to the ZnSe epitaxial layer is serious.更多还原