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超化学剂量Sb2Se3的Sb对Sb-Se系统非晶半导体晶化行为的影响
Effects of Extra Sb in Sb2 Se3 Stoichiometry on the Crystallization Behavior of Amorphous Semiconductor of Sb-Se System
【摘要】 本文采用 DSC、XRD、TEM 和瞬态反射率 R—温度 T,分析了 Sb2Se3,SbSe 和 Sb3Se2薄膜的非品析晶过程,研究了超化学计量 Sb2Se3的 Sb 对晶化行为的影响,发现晶体形貌和析品速率随着超量 Sb 的增加而变化。在薄膜中,Sb 起着晶核作用,加快析晶速率。
【Abstract】 In this paper,DSC.XRD.TEM.and Transient R-T were used to investigatethe amorphous crystalline transformation of Sb2Se3,SbSe and Sb3Se2 films,and tostudy the effects of extra quantity Sb of stoichiometry Sb2Se3 on their crystalliza-tion behavior.It was found that the morphology of crystallite and the rate of cry-stallization were changed with the increasing amount of the extra quantity of Sb.In films Sb could act as the nucleation center and speed up the rate of crystalliza-tion.
【关键词】 形态;
晶化速率;
反射率;
光存贮;
非晶态半导体;
【Key words】 Morphology; Rate of crystallization; Reflectivity; Optical memory;
【Key words】 Morphology; Rate of crystallization; Reflectivity; Optical memory;
- 【文献出处】 无机材料学报 ,Journal of Inorganic Materials , 编辑部邮箱 ,1992年02期
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