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非晶态半导体多层膜结构的低角度X射线衍射研究

THE STUDY OF AMORPHOUS SEMICONDUCTOR MULTILAYER STRUCTURES BY LOW-ANGLE DIFFRACTION TECHNIQUE

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【作者】 徐骏姜建功蒋树声陈坤基

【Author】 Xu Jun Jiang Jiangong Jiang Shusheng Chen Kunji(Department of Physics)

【机构】 南京大学物理系南京大学物理系

【摘要】 本文报道了用低角度x射线衍射(LXD)技术研究由a-Si:H与a-SiCx:H构成的组分调制多层膜的周期性,厚度、界而平整度及微结构.结果表明,大多数样品结构具有原子尺度的平整度及陡峭的界而。由衍射峰的位置与强度定出的调制厚度与由生长速率估计的结果符合得较好。对由辉光放电法制备的样品,由于气流影响而引起的周期结构的涨落作了观测和讨论。

【Abstract】 In this paper, the periodicity, the thickness and interfacial flatness of compositional modulation layers, as well as microstructures on a-Si:H/a-SiCx:H multilayer, have been studied by using Low-angle X-ray diffraction technique. The results show that most of the sublayer structures have fine periodicity and have sharp interfaces in an atomic size. The values of modulation thickness calculated from the position and intensity of diffraction peaks are in good agreement with the design values according to the deposition rate. The fluctuation of periodic structures due to the influence of gas flow mode has also been observed and discussed for samples prepared by the glow discharged method.

  • 【文献出处】 南京大学学报(自然科学版) ,Journal of Nanjing University(Natural Sciences) , 编辑部邮箱 ,1992年02期
  • 【分类号】TN304.8
  • 【下载频次】69
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