节点文献
硅中氧的FTIR研究
FTIR STUDY OF OXYGEN IN SILICON
【摘要】 对不同氧含量的硅片在300K到4.2K温度范围进行红外吸收测量表明:低温(80~4.2K)下硅的红外吸收谱中1127cm-1处的吸收是硅中氧的吸收峰.
【Abstract】 Silicon crystals of different oxygen contents have been investigated by means ofinfrared absorption spectroscopy at 300K and 4.2K. It is seen from the experiments thatthe absorption band at 1127cm-1at low temperatures (804.2K) is due to oxygen absorp-tion.
【基金】 红外物理国家重点实验室部分资助课题
- 【文献出处】 红外与毫米波学报 ,Journal Infrared Millimeter and Waves , 编辑部邮箱 ,1992年04期
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