【摘要】 通过分子束外延生长不同组分的Ge_xSi_1-x标样,测量其俄歇谱（dN/dE～E）,得到了在指定的实验条件下Ge（LMM）和Si（KLL）幅度之比与Ge组分x的关系,与只用纯Ge和纯Si原子灵敏度因子之比计算结果差别很小.证明俄歇电子谱是组分x原位测量的有效手段,相对误差在10%以内.讨论了Ge的偏析现象,在x>0的情况下Ge偏析不致于影响上述测量方法的准确性.更多还原

【Abstract】 The dependence of Auger intensity （p-p） ratio of Ge （LMM） to Si （KLL） onthe composition x of Ge under specified experimental conditions has been obtained fromthe Auger spectra （dN/dE～E） of MBE-grown Ge_xSi_1-x standards. It is slightly differentfrom the calculated result based on the relative atomic sensitivity factors obtained frompure Ge and pure Si standards. Auger Electron Spectroscopy turns out to be an effectivemeans for in-situ Ge composition measurement, and in most cases the relative error isaround 10% or less. Ge segregation has been discussed. In case x>0.1, Ge segregation hasno appreciable effect on the accuracy of such measurement method.更多还原