【摘要】 以三氯叔丁醇锡和三氯化锑为主的有机-无机溶液,采用垂直浸涂法,在普通Na-Ca-Si系玻璃基片上制备了透明的掺锑SnO₂导电膜。薄膜的主透过波长在480nm附近,膜厚达1.26μm时其透光率约为80％,薄层电阻R_s可低达35Ω。研究表明,预涂SiO₂致密膜对于消除由于界面上Na⁺的扩散而造成的电性能下降是有效的。锑的掺杂浓度在Sb/Sn=6％（mol）时膜有最低的R_s值,可见光-远红外透射率随Sb的增加而下降。随膜厚的增加,R_s按指数规律下降,但光吸收增加。膜厚在1.2μm时其光电特性优化因子φ_T（?）最大。适当提高热处理温度和延长热处理时间,膜中SnO₂主晶相的晶化程度提高,膜的光、电性能可以同时得到改善。更多还原

【Abstract】 Using tin trichloridc monoalkoxide SnCl₃ （OBu^t） and trichloride antimony as main starting materials, Sb-doped SnO₂ transparent conductive films on thc sodc-lime-silica glass substratcs were prepared by dip-coating method. The main transmissive wavelength of the films is near 480nm. When the film thickness reaches 1.26μm, the transmittance is about 80％ and the sheet resistance R_s can be as low as 35Ω. The type and the mechanism of conductivity for SnO₂: Sb film were discussed. Thc results show that the decreasing of conductivity due to Na⁺ diffusing into SnO₂: Sb films can be prevented by precoating dense SiO₂ films on the substrates. The value of R_s decreases to minimum when Sb-doped concentration is about 6％（mol）. The optical transmission decreases with increasing the antimony content. The figure of merit φ_TC of the film achieves a maximum value when the thickness is 1.2μm. The heat treatment conditions which affecting the properties of the films were also studied.更多还原