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ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV35 Cl6+ BEAM
【摘要】 <正> In this paper, an elastic recoil detection analysis method is described using 35 MeV 35Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.
【Abstract】 In this paper, an elastic recoil detection analysis method is described using 35 MeV 35Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.
- 【文献出处】 Nuclear Science and Techniques ,核科学与技术(英文版) , 编辑部邮箱 ,1992年03期
- 【被引频次】1
- 【下载频次】12