【摘要】 提出了一种新的1.3μm InGaAsP行波半导体激光放大器封装结构。由于采用脉冲激光焊接技术定位焊接耦合光纤,并优化了焊接工艺获得了良好的对准长期稳定性。更多还原

【Abstract】 A new package structure of 1.3μm InGaAsP travelling-wave semiconductor laser amplifier (TWSLA) is presented. By using laser welding location and optimizing welding technique, the coupling fibers are fastened on the TW-SLA heatsink and high Iong-term alignment stability is achieved.更多还原