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C60对金刚石低压气相沉积的影响
Effect of C60 Fullerene on Low Pressure Diamond Growth from the Vapour Phase
【摘要】 研究了在微波等离子体化学气相沉积(MPCVD)条件下纯度为99.5%的C60对金刚石在单晶硅衬底上形核的影响。发现预先涂覆在硅衬底上的C60极大地促进了金刚石的形核,其作用不亚于最近美国西北大学的研究者所采用的C70。提出了C60促进金刚石低压气相形核的机理,并对可能的应用前景进行了讨论。
【Abstract】 Effect of C60 fullerene on low pressur diamand growth from the vapour phase was studied. It wasfound that nucleation of diamond on C60 coated, un-polished single crystal silicon substrate was greatlyenhanced. The degree of enhancement on diamond nucleation was as good as that of C70 as recently reportedby researchers from Nothwest University of USA. The mechanism of the observed enhancement wasexplored. The significance and application prospects of the present discovery was discussed.
【基金】 863计划资助项目
- 【文献出处】 高技术通讯 ,High Technology Letters , 编辑部邮箱 ,1992年10期
- 【分类号】O613.71
- 【下载频次】9