【摘要】 利用国产第一台CBE设备成功地外延生长了GaAs材料,大量观测表明,MOMBE生长的GaAs没有椭圆缺陷。详细分析了衬底温度对生长速率的影响,着重研究了Ⅴ/Ⅲ比与外延层背景载流子浓度的关系,利用优化的条件,获得了较高质量的外延层。更多还原

【Abstract】 Undoped GaAs films are grown successfully with the first homemade MOMBE （CBE, GSMBE） equipment. On the epilayer surface of GaAs no oval defect is observed that usually appear on MBE GaAs surface. The optimum growth temperature is about 450～500℃. The examination of the growth process indicates that the carrier concentration of the undoped GaAs films decreases as the As₄ pressure increases at a constant TEGa flow rate. The Hall mobility of the carriers in P-type film is 415 cm²/v · s（RT）, the carriers concentration is 1.6×10¹4cm^-3. This result indicates a low level compensation in the GaAs epilayers.更多还原