节点文献
SIMOX技术及CMOS/SIMOX器件的研究与发展
Research and Development of SIMOX Technology and CMOS/SIMOX Devices
【摘要】 SIMOX技术是最具有发展前途的SOI技术之一。在发展薄硅层、深亚微米OMOS/SOI集成电路中,SIMOX技术占有极其重要的地位。本文综述了SIMOX基片的形成、高质量SIMOX基片的制备方法。阐述了薄硅层OMOS/SIMOX器件的工艺特点以及器件的性能特点。本文也就SIMOX技术及GMOS/SIMOX器件的研究现状及发展趋势进行了讨论。
【Abstract】 SIMOX is one of the most promising SOI technologies. SIMOX technology occupies a very important position in the development of thin film Si layer and deep submicrometer CMOS/SOI IC. This paper rewiews the formation of SIMOX wafers and the methods of producing high quality SIMOX wafers, and presents the characteristic processing and performance of thin film CMOS/SIMOX devices.The status and trends of SIMOX technology and CMOS/SIMOX devices are also discussed.
- 【文献出处】 电子学报 ,Acta Electronica Sinica , 编辑部邮箱 ,1992年05期
- 【被引频次】2
- 【下载频次】39