【摘要】 采用X-射线衍射（包括小角度衍射方法）研究了低温气相生长金刚石薄膜和单晶硅衬底之间的界面过度层。发现在较高温度下（700℃）过渡层为α-SiC,在较低沉积温度范围（580-290）℃过渡层则由α-SiC和SiO₂所构成。对界面层中α-SiC和SiO₂的晶体结构以及金刚石薄膜面间距进行了讨论。更多还原

【Abstract】 The constituent and the structure of the interface layer between the low temperature deposited diamond films and the single crystal silicon substrate was studed by X-ray diffraction (including small angle diffraction) technique. It was found that the interface layer for diamond film deposited at 700℃ was α-SiC. At lower temperature range (580-290)℃, the interface layer was composed of α-SiC and SiO2. Crystal structure of α-SiC and SiO2, and the d-spacings of the diamond films were discussed.更多还原