【摘要】 我们在硅分子束外延中利用共蒸发B₂O₃的方法在硅中进行硼掺杂,掺杂浓度可控制在4×10¹⁷cm^-3至4.2×10¹⁹cm^-3之间,这说明不需要利用离子注入或高温掺杂炉,也可以在硅外延层中实现有效的P型硼掺杂.我们还对掺杂外延层的质量进行了初步分析:外延层剖面均匀、没有明显的偏析现象;当硅源速率在 2A/s时,外延层中氧含量与衬底相同.更多还原

【Abstract】 Boron doping has been realized in silicon molecular beam epitaxy using B₂O₃ source withthe usual Knudsen cell without using a special high temperature cell or low energy ion implan-tation technique. Carrier concentration can be controlled in the range from 4×10¹⁷cm^-3 to 4×10¹⁹cm^-3 by changing the crucible temperature. The carrier profile achieved by Knudsen cellshutter opening and closing was sufficiently steep demonstrated by the result of extended resisti-vity. The oxygen concentration in the epitaxial film depends on the evaporation rare of silicon.When silicon evaporation arte was 0.2nm/s, the oxygen concentration in the epitaxial film wasthe same as in the substrate.更多还原