【摘要】 本文从理论上及实验上分析研究了半导体激光器(LD)功率输出特性与其腔面反射率之间的关系.研究结果表明,通过改变LD腔面反射率,可以使其输出功率增大,也可以使其转变为新的光电器件,如超辐射发光二极管(SLD)或行波半导体激光放大器(TW-SLA)等等.在大量实验数据的基础之上建立了LD输出功率曲线阈值与腔面反射率关系的经验公式,确定了LD最佳输出功率腔面反射率以及SLD和TW-SLA的工作条件.更多还原

【Abstract】 The relation between the power output characteristics of the laser diode (LD) and the re-flectivity of the cavity facets of the LD are analyzed and studied. It is shown from the resultsof the studies that by means of changing the reflectivity of the cavity facets of the LD, the po-wet output may be increased and new-type optoelectronical devices such as superradiation laserdiode (SLD) and travelling-wave semiconductor laser amplifier (TW-SLA) may be developed.On the basis of a lot of experimental data, a formula for describing the relation between the thre-shold current of the P-1 curve and the reflectivity of the cavity facets is derived. The optimum re-flectivity for the maximum power output and the conditions for the operation of the high-power-output LD, SLD and TW-SLA are determined.更多还原