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用质量分离的低能离子束外延法生长β-FeSi₂半导体外延膜的初步研究

Study on Growth of Semiconducting β-FeSi₂ Epitaxial Thin Films by Mass-Analyzed Low Energy Ion Beam Epitaxy

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【Author】 Yao Zhenyu/Institute of Semiconductors.Academia Sinica,Beijing,100083Ren Zhizhang/Institute of Semiconductors.Academia Sinica,Beijing,100083Wang Xiangming/Institute of Semiconductors.Academia Sinica,Beijing,100083Liu Zhikai/Institute of Semiconductors.Academia Sinica,Beijing,100083Huang Dading/Institute of Semiconductors.Academia Sinica,Beijing,100083Qin Fuguang/Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Academia Sinica,Beijing,100083Lin Lanying/Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Academia Sinica,Beijing,100083

【机构】中国科学院半导体研究所；中国科学院半导体研究所半导体材料科学实验室；中国科学院半导体研究所半导体材料科学实验室北京100083；北京100083；北京100083；

【摘要】采用质量分析的低能离子束外延法生长了半导体性质的β-FeSi₂外延薄膜.就我们所知,在用同类方法的研究中,国际上尚属首次.AES测量及RHEED观察肯定了外延的β-FeSi₂的存在;垂直入射的光透射谱又证实了外延膜是具有直接禁带的、禁带宽度为～0.84 eV的半导体性质的薄膜.室温下的霍耳迁移率μH达600 cm²V^-1s^-1,比文献报道高两个量级.更多还原

【Abstract】 Semiconducting β-FeSi₂ epitaxial thin films have been grown hy Mass-Analyzed Low Energy lon Beam Epitaxy （MALE-IBE, or IBE） for the first time. The existance of β-FeSi₂ epitaxialfilms and its stoichiometry are confirmed by RHEED and AES, respectively. Normal incidencespectral transmittance data showed a narrow direct energy gap of 0.84ev of Semiconductingβ-FeSi₂. The Hall morbility μ_H is about 600 cm²·V^-1S^-1 at room temperature, which is the highestvalue achieved up to now as we know.更多还原