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GaAlAs/GaAs多量子阱激光器结构设计

Structure Design for GaAlAs/GaAs Multiquantum Well Lasers

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【Author】 Zhang Jingming/Institute of Semiconductors, Academia Sinica, BeijingXu Junying/Institute of Semiconductors, Academia Sinica, BeijingXiao Jianwei/Institute of Semiconductors, Academia Sinica, BeijingXu Zuntu/Institute of Semiconductors, Academia Sinica, BeijingLi Likang/Institute of Semiconductors, Academia Sinica, BeijingYang Guowen/Institute of Semiconductors, Academia Sinica, BeijingZeng An/Institute of Semiconductors, Academia Sinica, BeijingQian Yi/Institute of Semiconductors, Academia Sinica, BeijingChen Lianghui/Institute of Semiconductors, Academia Sinica, Beijing

【机构】国家集成光电子学联台实验室中国科学院半导体研究所；国家集成光电子学联台实验室中国科学院半导体研究所北京100083；北京100083；北京100083；

【摘要】本文详细地讨论了多量子阱激光器材料的结构设计、量子阱结构对激射波长的影响以及波导限制层铝含量x值对光限制因子的影响.用由密度矩阵理论推导的线性光增益公式,计算了光增益.从受激阈值条件得到最佳阱数和最佳腔长.为多量子阱激光器材料结构设计提供了有效的方法.更多还原

【Abstract】 This paper detailed the structure design for multiquantum-well lasers, the influence of quantum-well structure on excited wavelength and the dependence of optical limited factor onaluminium mole fraction x in waveguide cladding layer. The optical gain was calculatedby linear optical gain expression developed with density-matrix theory. According to thethreshold condition, the optimal cavity length and the optimal well number were obtained.The optimal structure design for the multiquantum-well laser was provided by this method.更多还原

【关键词】激光器结构；多量子阱； GaAlAs/GaAs；激射波长；腔长；结构设计；限制因子；条形激光器；有源区；增益曲线；

【基金】中国科学院重点资助

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1992年08期

【被引频次】2
【下载频次】156

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