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TiO₂薄膜制备及其表面光电压谱研究

Study on Preparation and SPV Spectrum of TiO₂ Films

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【Author】 Dai Guorui/Jilin University,Changchun,130023Liu Wang/Jilin University,Changchun,130023Chen Zili/Jilin University,Changchun,130023Jiang Yueshun/Jilin University,Changchun,130023Zhu Zhenjia/Jilin University,Changchun,130023Chen Lihua/Jilin University,Changchun,130023Li Tiejin/Jilin University,Changchun,130023

【机构】吉林大学电子科学系；吉林大学电子科学系长春130023；长春130023；长春130023；

【摘要】本文报道了采用PECVD技术淀积TiO₂薄膜,深入地研究了反应条件对薄膜生长的影响,并对薄膜进行了光电子能谱和表面光电压谱测试,结果表明,Ti/O原子比接近2,钛原子氧化态为4,高温氢气退火处理的样品,存在三价态钛Ti³⁺.TiO₂薄膜淀积在硅衬底上,在合适条件下,表面光电压信号增强约二个数量级,主要是形成异质结和消反射作用的结果.更多还原

【Abstract】 The titanium dioxide （TiO₂） films were made by PECVD method. The effects of reactionfactors on grown films are investigated. The structure of the TiO₂ films has been determinedby X-ray photoelectron spectroscopy, and the photovoltaic spectra are measured. The experim-ental results show that the atom ratio O/Ti is the value of about 2 and the Ti³⁺ and Ti⁴⁺ areobserved in the TiO₂ films annealed at high temperature in H₂ gas. For TiO₂ films depositedonto silicon substrates under suitable condition, the surface photovoltaic intensity increasesabout two orders of magnitude. It is attributed to the heterojunction formaion of TiO₂/Si andthe action of antireflection.更多还原