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AlGaAs混晶中Te施主能级

Donor Levels in Te-Doped AlGaAs

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【Author】 Kang Junyong/Department of Physics, Xiamen University,Xiamen,361005Huang Qisheng/Department of Physics, Xiamen University,Xiamen,361005Lin Hong/Department of Physics, Xiamen University,Xiamen,361005Chen Chao/Department of Physics, Xiamen University,Xiamen,361005Tang Wenguo/National Laboratory for Infrared Physics,Shanghai,200083Li Ziyuan/National Laboratory for Infrared Physics,Shanghai,200083

【机构】厦门大学物理系；红外物理国家实验室；红外物理国家实验室厦门361005；厦门361005；上海200083；上海200083；

【摘要】用低温光致发光光谱,暗条件及光照条件下的深能级瞬态谱方法,对组分范围为x=0.23-0.77的掺Te的AlGaAs混晶的杂质能级进行了研究.结果表明,Te杂质形成包括多个施主能级的复杂能级结构.本文对实验结果作了讨论.更多还原

【Abstract】 Impurity levels in Te-doped Al_xGa_1-x As for the composition range of x=0.23-0.77have been studied by photoluminescence and Deep Level Transient Spectroscopy under darkand illumination conditions. The results show that a complicated level structure consisting ofseveral donor levels is formed by substitutional Te impurity. A discussion on the results isgiven.更多还原

【关键词】施主能级； AlGaAs； Te；混晶；深能级瞬态谱；能级结构；光致发光光谱；杂质能级；浅能级；发光强度；

【基金】国家自然科学基金;红外物理国家实验室资助

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1992年06期

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