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CoSi₂中As⁺和BF₂⁺注入杂质再分布形成硅化物化浅结性能研究

Shallow Silicided Junctions Formed by Dopant Redistribution of As⁺ and BF₂⁺ Implanted into CoSi₂

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【Author】 Xu Li/Institute of Microelectronics,Peking University,Beijing,100871Zhang Guobing/Institute of Microelectronics,Peking University,Beijing,100871Chen Wenru/Institute of Microelectronics,Peking University,Beijing,100871Wu Guoying/Institute of Microelectronics,Peking University,Beijing,100871Wang Yangyuan/Institute of Microelectronics,Peking University,Beijing,100871Gong Li/Fraunhofer-Arbeitsgruppe fur Integrierte Schaltungen,Erlangen.Germany

【机构】北京大学微电子学研究所； Fraunhofer-Arbeitsgruppe fur Integrierte Schaltungen； Erlangen； Germany 北京100871；北京100871；北京100871；

【摘要】向CoSi₂膜中分别注入As⁺和BF₂⁺杂质,以这种掺杂硅化物作为扩散源,用快速热处理使注入杂质再分布至CoSi₂下面的硅衬底中,能制作出结深为0.12μm的硅化物化N⁺-P和 P⁺-N浅结.本文研究了所制作的浅结性能,井从注入杂质在 COSi₃/Si系统中的再分布行为,讨论了浅结形成机理.更多还原

【Abstract】 A shallow N⁺-P or P⁺-N junction with CoSi₂ can be formed by driving the dopants,which are primarily implanted into the silicide film, to the underlying silicon using rapidthermal annealing. This process yields a jnnction with a depth of 0.12μm both for As⁺ andBF₂⁺ implants. The junction formation mechanism is discussed from the viewpoint of dopantredistribution behaviors in the CoSi₂/Si bilayered structure.更多还原