【摘要】 本文使用TEM分析、X射线衍射以及电导和霍耳效应联合测量等手段研究了Ar⁺激光结晶a-Si:H膜的结构和电学性质.结果表明a-Si:H液相激光结晶膜（LP-LCR）的平均晶粒尺寸达数十微米,呈<111>择优取向,室温电导率为1.5（Ω·cm）^-1,电子霍耳迁移率达36cm²V^-1s^-1,是一种有应用前景的薄膜.更多还原

【Abstract】 The structural and electrical properties of crystallized a-Si:H films obtained by Ar⁺ la-ser scanning irradiation have been investigated by means of TEM, X-ray diffraction spectraand conductivity- Hall measurements.For the liquid phase laser crystallized films （LP-LCR）,the results show that the average grain size is about tens of micrometers and the preferentialcrystal orientation is to the direction of <111>. At room temperature the conductivity of cry-tallized films is 1.5 （Ω·cm）^-1 and the Hall mobility of electrons is about 36 cm²V^-1S^-1.The re-sults demonstrate that the LP-LCR films of a-Si:H are adequate for device application.更多还原