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关于一维掺杂晶体表面态
Surface State Characteristics of One-Dimension Dopant Crystal
【摘要】 本文应用格林函数方法讨论一维掺杂晶体的表面态。证明:断短键时存在零能表面态,而不论断短键或长键,均出现非零能局域表面态。当掺杂吸收于短键时,若U>(J0-J1)则两个束缚态出现于能隙内,若U<(J0-J1)则出现于带外,且在隙中心出现中间隙态。当掺杂吸收于长键,此时存在4个束缚态。
【Abstract】 The electron surface states caused by dopants in polyacetylence for dimerized one-dimension crystal are investigated by means of Green’s function. It is shown that, when the dopant sits near the double bond (single bond cut-off), two bound states are in the gap for U>(J0-J1) or outside the bands for U<-(J0-J1). Furthermore a mid-gap state emerges for U=2.948 eV. If the dopant is absorbed at the single bond (double bond cut-off), two of the four formed bound states are in the gap for U>(J0+J1) with a midgap broken state emergeing in the gap center, while the other two are outside the bands for U<- (J0+J1).
- 【文献出处】 中山大学学报(自然科学版) ,Acta Scifntiarum Naturalium Universitatis Sunyaatseni , 编辑部邮箱 ,1991年03期
- 【被引频次】1
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