【摘要】 本文利用二次离子质谱对GaAs^-AI_xGa_1-xAs异质结进行了定量深度分析。首先,在对LTE模型中的温度T的物理意义作了进一步探讨的基础上,提出采用相对灵敏度因子结合双定标的LTE模型法,对GaAs-Al_xGa_1-xAs异质结的元素成份进行定量分析,获得了满意的结果,此外,本文利用Ta₂O₅-Ta标准陡峭界面对SIMS溅射剖面进行弧坑效应修正,得到异质结中元素的深度分布曲线,从而给出异质结中各种元素随深度的浓度分布。更多还原

【Abstract】 Quantitative profile of GaAs-Al_XGa_1-X As heterojunction was obtained by SIMS.After studying the physics meaning of tempreture T in LTE model, we proposeda quantitative method-LTE model with two inner standard elements combined withRSF method. A satisfactory result was obtained by using this method to GaAs-Al_XGa_1-X As heterojunction. Besides, we use Ta₂O₅-Ta standard sharp interface to cor-rect the sputtering profile and have obtained the depth distributions of variouselements in the heterojunction. Then, depth quantification of GaAs-Al_XGa_1-XAsheterojunction was fulfilled.更多还原