【摘要】 文章采用时间微分扰动角关联方法细致地研究了核反应反冲注入到Si中的In的热退火现象。反冲注入后约70%的In处在高密度辐射损伤晶格无序区,随退火温度升高,晶格无序区逐渐缩小,经600℃退火后消失。但是实验发现,经798℃退火后,只有55%的In原子位于无扰动晶格替代位置,尚有45%的In原子仍处于扰动位置。文中对可能的扰动原因进行了讨论。更多还原

【Abstract】 Si wafer （N-type, P-doped, 1kΩ.cm） is implanted with ¹¹¹In by nuclearreaction recoils. Thermal annealing behavior of In in Si is studied by the timedifferential perturbed angular correlation technique. It is found that after 798℃annealing 55% of the In atoms occupy substitutional lattice sites in Si with theremainder in perturbed sites.更多还原