【摘要】 光电化学技术以它许多独特的优点为半导体性能测试提供了一种灵敏、方便,有时是其它方法也难以达到的综合性测试方法,尤其是对多层及异质结构材料多数的剖面分布测量.因此,它已广泛应用于材料性能测试和器件工艺.本文总结了半导体材料特性参数的光电化学测试技术,包括导电类型、p-n结位置、载流子浓度、少子扩散长度、深能级、禁带宽度、材料组份,以及部分参数的剖面分布的测定.介绍了国内外的研究进展.更多还原

【Abstract】 The semiconductor photoelectrochemical technique of many unique advantages has been believed to be a sensitive, convenient, versatile measure tech-nique particularly for multilayer structure and heterostructure materials. So it has been widely used for investigation of materials and the improvement of device technology. This paper presents a review on photoelectrocbemical technique determining semiconductor material physical parameters, such as conductivity type, p-n junction position, carrier concentration, diffusion length of minority carrier,deep level, bandgap, composition and profiles. The recent research progress on liquid junction of our country is also introduced.更多还原