【摘要】 用固态再结晶法生长了掺Sb-Hg_0.8Cd_0.2Te晶体。通过对掺杂晶片不同条件的热处理,促使晶体内的缺陷状态发生变化,并用热处理后迅速淬火的方法冻结高温下的缺陷状态。电学测量结果表明:掺杂样品的空穴浓度和热处理条件的关系明显不同于未掺杂样品。根据缺陷化学平衡理论分析认为重掺杂样品中Sb大多数以中性复合缺陷的形式存在,Sb具有受主、施主二重性,其状态和高温热处理条件有关。更多还原

【Abstract】 Samples of Sb-doped Hg_0.8Cd_0.2Te crystal grown in the solid recrystallization were annealed in different conditions to change the defect states, then frozen by quenching method. Hall effect and mobility measurements were performed on the samples in various temperatures and magnatic fields. The relationship between hole concentration and partial pressure of Hg was found to be contrast to that observed in undoped crystals. The analytical results indicate that the majority of the antimony appears to be present as electrically neutral pairs, the antimony behaves amphoterically and the defect states depend on the annealing condition of the material.更多还原