【摘要】 本文介绍了32×32面阵InSb电荷注入器件(CID)工作原理,着重于面阵结构的设计思想,InSb MIS结构电特性分析,及面阵器件工艺实现方法。并给出器件性能分析结果。更多还原

【Abstract】 This paper briefly reviews the basic CID mechanism, the design featrues of 32×32 area InSb CID device, the analysis and measurement of InSb MIS construction, and in troduce the realization method of fabrication processes. The performance analysis is also presented.更多还原