【摘要】 报道了组分y=0.76和0.84的晶格匹配In_1-xGa_xAs_yP_1-y/InP多量子阱的子能带结构低温光调制反射光谱研究结果,在0.9～1.5eV光子能量范围观察到限制的电子与空穴子带间的激子跃迁,还观察到限制的电子子带与空穴连续态间的跃迁,由此比较直接地确定了价带的不连续量,得到不连续因子Q_v=0.65±0.02。更多还原

【Abstract】 The results of the low temperature photoreflectance measurements for quaternary In_1-xGa_xAs_yP_1-y/InP （y=0.76, 0.84） multiple quantum wells are reported. The excitonic transitions between the confined electron and hole subbands and the transitions between the confined electron subband and the hole continuum are observed within the range of photon energy from 0.9 to 1.5eV. Based on these, a direct determination of the valence band discontinuity is made. The valence band offset i.e. Q_v=0.65±0.02 is obtained.更多还原