【摘要】 介绍了近年来迅速发展的8～12μmGaAs-GaAlAs多量子阱红外探测器、InAsSb和InAs-Ga_1-xIn_xSb应变超晶格材料和器件以及HgTe-CdTe超晶格材料的简单原理、特点及国外最新动态。预计在90年代它们将与HgCdTe材料和器件同样受到人们的关注与重视。更多还原

【Abstract】 As Substitutes alternatives to HgCdTe for 8～12μm infrared material and detector, GaAs-GaAlAs multiquantum well superlattice detector, InAsSb and InAs-Ga_1-xIn_xSb straind layer superlattice detector and HgTe-CdTe superlattice material have been developed in recent years. The simple explanation to the principle, the characteristics and the latest status of these detectors and materials are presented. It is expected that these materials will be in competition with HgCdTe for many applications.更多还原